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- W2012148689 abstract "AlInAsSb and Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As multiple-quantum-well (MQW) structures were grown by metalorganic vapor phase epitaxy. Silane (SiH4) and dimethylzinc (DMZn) were used as n-type and p-type dopants, respectively. The electron concentration of the AlInAsSb bulk layer increases from 5.2×1016 to 2.8×1017 cm−3 and the mobility decreases from 1204 to 703 cm2/V s with the flow rate of SiH4 increasing from 20 to 150 sccm. The hole concentration of the AlInAsSb bulk layer increases from 2.06×1015 to 5.8×1017 cm−3 and the mobility decreases from 284 to 120 cm2/V s with the flow rate of DMZn increasing from 20 to 200 sccm. Double crystal X-ray diffraction, secondary ion mass spectrometry, and photoluminescence were used to characterize the MQW structures." @default.
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- W2012148689 date "1999-06-01" @default.
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- W2012148689 title "Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of AlInAsSb and AlInAsSb/InGaAs multiple-quantum-well structures" @default.
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- W2012148689 doi "https://doi.org/10.1016/s0022-0248(99)00114-1" @default.
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