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- W2012157554 abstract "A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe2O4 films can be grown epitaxially on Si(111) using a Y2O3 buffer layer, and remarkably the Y2O3/Si(111) interface is stable and remains atomically sharp. CoFe2O4 films present high crystal quality and high saturation magnetization." @default.
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- W2012157554 date "2014-07-07" @default.
- W2012157554 modified "2023-10-09" @default.
- W2012157554 title "Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces" @default.
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- W2012157554 doi "https://doi.org/10.1063/1.4887349" @default.
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