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- W2012167096 abstract "Measurements are reported of the electrical characteristics and temperature dependence of threshold current of InGaAsP-InP d.h. lasers (λ = 1.3 μm). Analysis of the I dV/dI characteristics of these devices indicates that drift leakage of carriers from the active region is not responsible for the high temperature sensitivity of threshold in this material system." @default.
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- W2012167096 title "Temperature dependence of threshold and electrical characteristics of InGaAsP-InP d.h. lasers" @default.
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- W2012167096 doi "https://doi.org/10.1049/el:19800463" @default.
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