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- W2012174145 abstract "Structure and targets of the European MEDEA project on ion projection lithography as well as related U.S./European cooperation are explained. By assuming 10 μm virtual source size and 1 eV (full width half maximum) energy spread calculations for a multielectrode electrostatic ion–optical system (1.25 m between ion source and stencil mask, ≈1.8 m between mask and wafer) we realize the possibility of 100 nm resolution (line and space) over an exposure field of 22×22 mm2 even when using the MONTEC model for calculating the stochastic blur and when running 3.3 μA He+ ion beam current through the ion–optical column, thus more than twice exceeding target specifications. Thus, for 100 nm resolution and 50% pattern density the raw throughput is ≈12 cm2/s corresponding to >75 WPH (pattern within 80% of 300 mm wafer area)." @default.
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- W2012174145 date "1998-11-01" @default.
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- W2012174145 title "Ion projection lithography: Status of the MEDEA project and United States/European cooperation" @default.
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- W2012174145 doi "https://doi.org/10.1116/1.590454" @default.
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