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- W2012175025 abstract "Polycrystalline silicon films were grown on Si3N4 by CVD from a SiH4/H2 ambient at 900°C and at atmospheric pressure. A two-stage nucleation process enabled SEM observation of isolated single crystals in addition to the more familiar dense poly layers. The direction of fast growth is <110> and the crystals are bounded by slow growing {111} and {100} faces. Novel surface features are reported that presumable arise from the action of stress and impurities during growth of these layers." @default.
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- W2012175025 date "1983-12-01" @default.
- W2012175025 modified "2023-09-26" @default.
- W2012175025 title "Surface morphology of polycrystalline silicon films formed by chemical vapour deposition" @default.
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- W2012175025 doi "https://doi.org/10.1016/0022-0248(83)90082-9" @default.
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