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- W2012177054 abstract "Abstract A new low energy ion implantation process for producing a buried oxide layer and a thin surface oxide at the same time is presented. The utilized process is ion beam induced oxidation of silicon, which is based on the implantation of oxygen in an oxygen atmosphere. An oxidation mechanism is proposed. The dependence of the thickness of the surface oxide on the oxygen pressure in the implant chamber and on the O + ion dose was investigated by Auger electron spectroscopy, C - V measurements and ellipsometry. The obtained thickness of the surface oxide was between 40 and 60 A. The insulation properties have been proven to be good within a voltage range of a few volts by I – V measurements." @default.
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- W2012177054 title "A new process for simultaneous fabrication of a buried and a surface oxide layer" @default.
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- W2012177054 doi "https://doi.org/10.1016/0038-1101(95)00123-9" @default.
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