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- W2012185762 abstract "Be ion implantation/irradiation in HgCdTe has been explored from the point of view of fabricating n region on p-type structures. Be implantation was carried out in vacancy doped p-type bulk HgCdTe crystals at 200KeV ion energy and a fluence of 1×1014ions∕cm2. Implanted samples were annealed at 150°C under nitrogen ambient for different durations. Be appears to be settling as an isoelectronic impurity in HgCdTe after the implant annealing process. A n-type region with reasonably good electron mobility is formed as a consequence of the redistribution of irradiation induced defects." @default.
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- W2012185762 date "2007-06-01" @default.
- W2012185762 modified "2023-09-27" @default.
- W2012185762 title "Be ion irradiation induced p- to n-type conversion in HgCdTe" @default.
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