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- W2012189698 abstract "We apply an array of correlated spatially-resolved techniques, including μ-Raman/photoluminescence/reflectance/laser-beam-induced-current in conjunction with scanning electron microscopy and atomic force microscopy, to study the impact of the microscopic-scale thickness inhomogeneity of CdS layer in a Cu2ZnSnSe4 thin-film solar cell. Thicker CdS regions are found to cause more light reflecting loss thus yield lower external quantum efficiencies and energy conversion efficiencies than the general area. However, these regions show much less efficiency degradation at high illumination intensity, leading to an inversion of laser-beam-induced-current contrast in the area mapping. While improving the CdS layer uniformity can boost the device performance, the finding further points out the possibility of operating thin-film photovoltaic devices based on the similar materials (such as CuInGaSe2, CdTe, Cu2ZnSn(S,Se)4) under a substantially higher illumination density for concentrated photovoltaic and photo-detection." @default.
- W2012189698 created "2016-06-24" @default.
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- W2012189698 date "2013-12-09" @default.
- W2012189698 modified "2023-09-23" @default.
- W2012189698 title "The reversal of the laser-beam-induced-current contrast with varying illumination density in a Cu2ZnSnSe4 thin-film solar cell" @default.
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- W2012189698 doi "https://doi.org/10.1063/1.4844815" @default.
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