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• W2012193323 abstract "The formation of circular cone-shaped Ge islands (12ifmmode^circelsetextdegreefi{} cones) has been observed for the growth of eight monolayers of Ge on Si(001) at 700 ifmmode^circelsetextdegreefi{}C using Sb as a surfactant. The Ge cones are strained and grow pseudomorphically, adopting the Si lattice constant. They have a tilt angle of 12ifmmode^circelsetextdegreefi{} and are composed of [117]-, [105]-type, and all intermediate facets. The island-size distribution is peaked around a typical size of ensuremath{sim}300--400 AA{}, which results from a formation process under equilibrium conditions for diffusion of the Ge atoms. Growth at lower temperatures down to 300 ifmmode^circelsetextdegreefi{}C with Sb as a surfactant results in epitaxial but very rough Ge films which show a high degree of disorder." @default.
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• W2012193323 date "1994-01-15" @default.
• W2012193323 modified "2023-09-26" @default.
• W2012193323 title "Surfactant-stabilized strained Ge cones on Si(001)" @default.
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• W2012193323 doi "https://doi.org/10.1103/physrevb.49.2637" @default.
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