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- W2012197912 abstract "A huge enhancement of band-to-band Auger recombination in semiconductors by electron-hole correlations is found from a quantitative calculation. In contrast to earlier attempts, our calculation of the Coulomb correlation factors is valid for all temperatures and carrier densities, including the high-temperature and low-density case. Our results nicely explain recent carrier-lifetime measurements on silicon and show that Coulomb-enhanced Auger recombination poses an intrinsic upper limit to the carrier lifetime even at room temparature, a factor of 30 lower than previously assumed." @default.
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- W2012197912 date "1990-07-09" @default.
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- W2012197912 title "Enhancement of band-to-band Auger recombination by electron-hole correlations" @default.
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- W2012197912 doi "https://doi.org/10.1103/physrevlett.65.215" @default.
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