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- W2012199654 abstract "High dose implantations of boron molecular ions such as BF+2 and BCl+2 ions in Si have been investigated in an attempt to form shallow P+ layers in the dose range 1×1015–1×1016 ions/cm2, in comparison with those of boron. For BF+2 implants it was found that both the effective surface carrier density Ns and junction depth Xj in Si after 1000°C anneal tend to completely saturate at doses above 5×1015 ions/cm2, while they tend to increase for B+ implants. From profile measurements of total and electrically active boron it was clarified that the additional implantation of BF+2 ions in excess of 5×1015 ions/cm2 results in the accumulation of inactive boron atoms particularly around the surface region. Junction depths in Si resulting from BF+2 implants are generally shallower than those resulting from B+ implants. For BCl+2 implants the values of Ns are generally much lower than those for BF+2 and B+ implants." @default.
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- W2012199654 date "1982-05-01" @default.
- W2012199654 modified "2023-09-23" @default.
- W2012199654 title "Electrical properties of Si heavily implanted with boron molecular ions" @default.
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- W2012199654 doi "https://doi.org/10.1063/1.331148" @default.
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