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- W2012205801 abstract "The authors have investigated deep levels in electron-irradiated n- and p-type 4H-SiC epilayers by deep level transient spectroscopy (DLTS). By low-energy electron irradiation at 116 keV, the Z1/2 and EH6/7 concentrations are increased in n-type samples, and the concentrations are almost unchanged after annealing at 950°C for 30 min. In p-type samples, the unknown centers, namely EP1 and EP2, are introduced by irradiation. By annealing at 950°C, the unknown centers are annealed out. The HK4 center (EV + 1.44 eV) is increased by the electron irradiation and subsequent annealing at 950°C. The dependence of increase in the trap concentrations by irradiation (NT) on the electron fluence reveals that NT for the Z1/2 and EH6/7 centers is in proportional to the 0.7 power of electron fluence, while the slope of the plot is 0.5 for the HK4 center. The Z1/2 and EH6/7 centers show similar annealing stage and are thermally stable up to 1500-1600°C, while the HK4 center is annealed out at about 1350°C. The Z1/2 and EH6/7 centers may be derived from a same origin (single carbon vacancy: VC) but different charge state. The HK4 center may be a complex including VC." @default.
- W2012205801 created "2016-06-24" @default.
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- W2012205801 date "2007-09-01" @default.
- W2012205801 modified "2023-09-28" @default.
- W2012205801 title "Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy" @default.
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- W2012205801 doi "https://doi.org/10.4028/www.scientific.net/msf.556-557.331" @default.
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