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- W2012258843 abstract "A tungsten silicide/polycrystalline silicon composite gate structure has been fabricated in which tungsten silicide layers on polycrystalline silicon have been deposited by the low‐temperature chemical vapor deposition method (at 360 °C) using a WF6/SiH4 gas mixture. The fluorine distributions in this structure have been studied by secondary ion mass spectrometry. In samples with as‐deposited tungsten silicide, it has been confirmed clearly that almost all of the fluorine resides in the silicide layer. After high‐temperature annealing (above 950 °C), however, fluorine is found to diffuse easily into the gate SiO2 through the polycrystalline silicon, that is, the gate oxide has been changed into the fluorine‐doped oxide." @default.
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- W2012258843 date "1987-04-06" @default.
- W2012258843 modified "2023-09-26" @default.
- W2012258843 title "Fluorine distributions in a chemical vapor deposited tungsten silicide/polycrystalline silicon composite gate structure" @default.
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- W2012258843 doi "https://doi.org/10.1063/1.98025" @default.
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