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• W2012294937 abstract "Abstract Ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 thin films annealed at different temperatures were prepared on Pt/Ti/SiO 2 /Si substrates by metalorganic decomposition method. The leakage current behavior and the current conduction mechanism were investigated. For all films, the leakage current density − electric field ( J−E ) characteristic is confined within a “triangle” in the log ( J ) −  log ( E ) plane bounded by three limiting curves: Ohm's law ( J  ∝  E ), trap-filled-limit ( J  ∝  E a , a  > 1), and Child's law ( J  ∝  E 2 ). At high field region, Bi 3.25 La 0.75 Ti 3 O 12 thin films with grains of rod-like show higher leakage current, while films with grains of spherical- or planar-like exhibit lower leakage current." @default.
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• W2012294937 date "2011-01-01" @default.
• W2012294937 modified "2023-09-26" @default.
• W2012294937 title "Testing field and annealing temperature dependence of leakage properties in Bi3.25La0.75Ti3O12 thin films" @default.
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• W2012294937 doi "https://doi.org/10.1016/j.tsf.2010.11.021" @default.
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