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• W2012302012 abstract "Abstract In this work, the effects of the degradation generated by homogeneous hot-electron injection in a one-dimensional model of current-voltage characteristics for short-channel MOSFETs are introduced. A distributed charge model, implemented in the SABER simulator is used. Simulation results obtained for n-MOS transistors demonstrate good agreement with the experimental data for interface state density inferior to 3 × 10 11 cm −2 eV −1 . The samples are degraded by homogeneous electron photoinjection and the interface trap density is performed by the pumping charge method." @default.
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• W2012302012 date "1995-07-01" @default.
• W2012302012 modified "2023-10-04" @default.
• W2012302012 title "Modeling and simulation of homogeneous degradation for N-channel MOSFETS" @default.
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• W2012302012 doi "https://doi.org/10.1016/0022-3093(95)00130-1" @default.
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