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• W2012302762 abstract "The deposition of polysilicon in a LPCVD batch reactor is numerically simulated with the computation of fluid flow and transport phenomena inside the LPCVD reactor. Small gas recirculation flows as a result of the temperature gradients can be seen in the empty inlet area. Comparison of wafers with and without reactive surfaces reveals inter-wafer recirculations near edges of wafers without deposition phenomena, and an elimination of these effects at chemically reactive wafers. A relatively simple surface chemistry with a comparison of four deposition models is analysed in an error analysis and by numerical simulations in 2D- and 3D-reactor models. No complex chemical models seem to be necessary unless the source of large errors in the determination of the activation energy can be reduced." @default.
• W2012302762 created "2016-06-24" @default.
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• W2012302762 date "1991-11-01" @default.
• W2012302762 modified "2023-10-09" @default.
• W2012302762 title "Numerical analysis of fluid flow and nonuniformities in a polysilicon LPCVD batch reactor" @default.
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• W2012302762 doi "https://doi.org/10.1016/0169-4332(91)90046-m" @default.
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