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- W2012305554 abstract "Abstract We observe magnetic field induced changes of the photo- and dark current in Schottky barrier diodes and p + -n-n + junctions made from hydrogenated amorphous silicon (a-Si:H). The relative change of photocurrent, ΔJ/J, depends on the applied voltage and on the wavelength of illumination. Our interpretation of these results, which is based on a previously published model for magnetic field dependent recombination (MFDR), confirms the current ideas on the collection mechanism in a-Si:H solar cells. The dependence of ΔJ/J on the doping of the n-layer indicates that MFDR occurs via uncharged dangling bond-type recombination centers with energy levels close to midgap. The observed changes in dark current for large forward and reverse voltages are attributed, respectively, to double injection and, tentatively, to magnetic field dependent generation." @default.
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- W2012305554 date "1980-01-01" @default.
- W2012305554 modified "2023-09-24" @default.
- W2012305554 title "Influence of magnetic field on the charge transport in amorphous silicon photovoltaic diodes" @default.
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- W2012305554 doi "https://doi.org/10.1016/0022-3093(80)90295-1" @default.
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