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- W2012318536 abstract "We exploit epitaxial relationships of rutile-type VO<sub>2</sub> with (0001) Al<sub>2</sub>O<sub>3</sub>, (111) LaAlO<sub>3</sub>, (10‾10) Al<sub>2</sub>O<sub>3</sub>, and (10‾12) Al<sub>2</sub>O<sub>3</sub> to achieve high-quality VO<sub>2</sub> thin-film synthesis. We show that the deposition temperature can be lowered when these substrates are employed compared to one with no preferred crystallographic relationship with VO<sub>2</sub>, such as Si. We also report the first thin-film synthesis of the metastable VO<sub>2</sub>(B) polymorph on (001) LaAlO<sub>3</sub> with a strongly preferred (001) out-of-plane orientation. These results are of interest for integrating <sub>VO2 </sub>films with other oxides in optoelectronic and reconfigurable device structures." @default.
- W2012318536 created "2016-06-24" @default.
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- W2012318536 date "2014-03-08" @default.
- W2012318536 modified "2023-09-26" @default.
- W2012318536 title "Synthesis of epitaxial rutile-type VO2and VO2(B) polymorph films" @default.
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- W2012318536 doi "https://doi.org/10.1117/12.2044055" @default.
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