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- W2012320412 abstract "During turnoff, current is localized to the center of the emitter stripe of a transistor. Depending on the magnitude of reverse base current and device parameters, the current density can reach levels which trigger avalanche injection. A simple model is presented which describes this effect and shows good agreement with measurements." @default.
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- W2012320412 date "1973-01-01" @default.
- W2012320412 modified "2023-09-28" @default.
- W2012320412 title "Second breakdown of transistors during inductive turnoff" @default.
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- W2012320412 doi "https://doi.org/10.1109/proc.1973.9044" @default.
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