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• W2012324062 abstract "We report the lowest-temperature chemical vapor deposition process for the growth of amorphous carbon nitride (CNx) films. The precursor, triazidotriazine or (C3N3)(N3)3, contains only CN or NN bonds, and evaporates and decomposes to carbon nitride films by 250 °C. Infrared and X-ray photoelectron spectroscopy (XPS) show that the amorphous films have primarily sp2-bonded structures with some retention of the precursor aromatic triazine ring (C3N3) character. Auger and XPS results show that the film composition is near CN1.5 (C3N4.5). Electron microscopy demonstrates that the CNx films have small particle domains near 50 nm and some porosity. The films exhibit strong UV absorption and weak photoluminescent emission below 500 nm." @default.
• W2012324062 created "2016-06-24" @default.
• W2012324062 creator A5057301071 @default.
• W2012324062 creator A5080139790 @default.
• W2012324062 date "2002-12-01" @default.
• W2012324062 modified "2023-10-06" @default.
• W2012324062 title "Low-temperature deposition of carbon nitride films from a molecular azide, (C3N3)(N3)3" @default.
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• W2012324062 doi "https://doi.org/10.1016/s0040-6090(02)00982-3" @default.
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