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- W2012339925 abstract "Our research goal is to develop InP-based devices as an alternative to QWIPs and HgCdTe for MIR detection. The approach we have pursued for longer wavelength detection on InP is a type-II superlattice consisting of Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</sub> As and GaAs <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> Sb <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-y</sub> alloys. These structures provide two advantages for MIR detection: large (greater than 700 meV) direct band-gaps, which should lead to a lower thermal carrier generation rate and the ability to adjust the detection wavelength by changing the compositions of GaInAs and GaAsSb and their thickness in the superlattice" @default.
- W2012339925 created "2016-06-24" @default.
- W2012339925 creator A5074052349 @default.
- W2012339925 date "2006-10-01" @default.
- W2012339925 modified "2023-09-24" @default.
- W2012339925 title "InP-based MIR Avalanche Photodiodes: Current Status and Future Prospects" @default.
- W2012339925 doi "https://doi.org/10.1109/leos.2006.279002" @default.
- W2012339925 hasPublicationYear "2006" @default.
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