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- W2012503247 abstract "We have derived expressions for the ultrasonic attenuation coefficient ensuremath{alpha} and the sound-velocity change ensuremath{Delta}v of heavily doped many-valley semiconductors at low frequencies in the weak-localization regime where any intervalley scattering strength has been taken into account. Quantum corrections due to the effect of localization give a negative contribution to ensuremath{alpha} and ensuremath{Delta}v and are insensitive to temperature provided that the intervalley scattering time is independent of temperature, while those due to the effect of mutual interaction give a positive contribution to ensuremath{alpha} and ensuremath{Delta}v and decrease with increasing temperature. The whole behavior of ensuremath{delta}ensuremath{alpha} and ensuremath{delta}ensuremath{Delta}v, the deviations from classical form for the attenuation coefficient and the sound-velocity change, are determined by the competition between the effects of localization and the effects of mutual interaction mentioned above. The magnitude of ensuremath{delta}ensuremath{alpha} and ensuremath{delta}ensuremath{Delta}v increase with decreasing intervalley scattering strength. For comparison, expressions for ensuremath{alpha} and ensuremath{Delta}v in heavily doped single-valley semiconductors have also been derived. The sign of the quantum corrections to ensuremath{alpha} and ensuremath{Delta}v is the same as that to the electrical conductivity in the many-valley case but opposite in the single-valley case." @default.
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- W2012503247 title "Acoustic properties of heavily doped many-valley semiconductors in the weak-localization regime" @default.
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- W2012503247 doi "https://doi.org/10.1103/physrevb.33.8458" @default.
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