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- W2012504868 abstract "In this study we present a new approach for p-type PERL solar cells based on an Al2O3 passivation in combination with boron doped amorphous SiCx. During a laser diffusion process, the rear side passivation is locally opened and simultaneously dopants are driven from the stack into the silicon to create a local back surface field resulting in a sheet resistance in the range of 15 Ω/sq. We show that the main contribution to the dopants in the local back surface field originates from the a-SiCx:B layer, while aluminum is mainly present near the surface. This p-type PassDop stack is compatible with a firing step, reaching surface recombination velocities lower than 3 cm/s. With this stack, small area solar cells on p-type float-zone silicon were processed, achieving energy conversion efficiencies up to 21.4% and fill factors of up to 82.5% with PVD contacts in a proof-of-concept batch." @default.
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- W2012504868 date "2014-12-01" @default.
- W2012504868 modified "2023-10-18" @default.
- W2012504868 title "PassDop rear side passivation based on Al2O3/a-SiCx:B stacks for p-type PERL solar cells" @default.
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- W2012504868 doi "https://doi.org/10.1016/j.solmat.2014.05.001" @default.
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