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• W2012505525 startingPage "L261" @default.
• W2012505525 abstract "High quality epitaxial n -type β-FeSi 2 thin films prepared by alternate Fe/Si multilayer deposition were doped with arsenic as impurity by sputtering method. Doping sources were heavily arsenic-doped silicon chips placed on the surface of silicon target. The starting β-FeSi 2 films before doping were typically n -type with a residual electron concentration of about 1.0 ×10 17 cm -3 and a mobility of about 260 cm 2 /V·s. When arsenic concentration changed from 7.0 ×10 17 to 1.9 ×10 18 cm -3 , net electron concentration increased from about 2.0 ×10 17 to 4.0 ×10 17 cm -3 , and electron mobility decreased from 250 to 160 cm 2 /V·s. Secondary ion mass spectroscopy (SIMS) measurements showed a homogeneous arsenic distribution in β-FeSi 2 films and a small diffused region (about 50 nm) at the interface between β-FeSi 2 and a Si substrate. Arsenic-doped β-FeSi 2 films exhibited epitaxial growth in the (110)/(101) orientation and a continuous structure without cracks. However, other crystalline orientations together with pinholes appeared when the arsenic doping concentration increased." @default.
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• W2012505525 date "2005-02-01" @default.
• W2012505525 modified "2023-09-27" @default.
• W2012505525 title "Arsenic Doping ofn-Type β-FeSi2Films by Sputtering Method" @default.
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• W2012505525 doi "https://doi.org/10.1143/jjap.44.l261" @default.
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