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- W2012509654 abstract "A new method for analyzing X-ray peak broadening due to thin film structures on (001) substrates in double crystal X-ray diffraction measurements is proposed. In the method, two typical features exibited by peak profiles for thin film structures are investigated. Diffrence variable Δ L is introduced as a convenient measure for analyzing the two features. It is theoretically derived that peak profiles measured using the new variable become hkl -independent if the thin film structural factors dominate the peak broadening. Measurement conditions and geometry are essentially taken into account for the derivation. Based on the theoretical results, a simple criterion is proposed to judge whether broadening of a relevant peak is due to a thin film structure or not. The method is experimentally demonstrated via application to X-ray satellite peaks of an InGaAsP/InGaAsP multi-quantum-well (MQW) sample, and it is verified that the method works well for the satellite peaks. The method is essentially applied to the analysis of unknown broad and less intense peaks (background peak), which are observed in the X-ray diffraction profiles of tensile strained InGaAsP/InGaAsP MQW. Our method clarified that the microscopic size effect dominates the profile of the unknown peak. It is concluded that the unknown peak is caused by the modulation of the composition in the tensiled well layer. The observation of the unknown peak suggests that the strain field is not uniform in either the growth or the lateral direction." @default.
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- W2012509654 date "2001-09-01" @default.
- W2012509654 modified "2023-09-26" @default.
- W2012509654 title "A Novel Analysis Method for Peak Broadening Due to Thin Structures in Double Crystal X-Ray Diffraction Measurements" @default.
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- W2012509654 doi "https://doi.org/10.1143/jjap.40.5454" @default.
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