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• W2012509946 abstract "Transparent conductive, Al-doped ZnO films (ZnO:Al) have been deposited by means of an atomic layer deposition method with the surface chemical compositions of ZnO (film A) and Al 2 O 3 (film B). The sheet resistance, surface work function, and structure characteristics of ZnO:Al films have been investigated. Organic light emitting diodes (OLEDs) were fabricated on glass substrates using two different ZnO:Al anodes. The devices fabricated with them exhibited higher current and luminance with higher external quantum efficiencies below approximately 5000 cd/m 2 , than those fabricated with a conventional tin-doped indium oxide (ITO) anode. The external quantum efficiencies of the devices with film A, film B, and ITO were 1.86, 1.97, and 1.74%, respectively." @default.
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• W2012509946 date "2005-01-01" @default.
• W2012509946 modified "2023-09-26" @default.
• W2012509946 title "Characteristics of Organic Light Emitting Diodes with Al-Doped ZnO Anode Deposited by Atomic Layer Deposition" @default.
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• W2012509946 doi "https://doi.org/10.1143/jjap.44.l242" @default.
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