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- W2012594501 abstract "In this study, we compare and discuss the defect behavior of sapphire single crystals implanted with different fluences (1 × 1016–1 × 1017 cm−2) of carbon and nitrogen with 150 keV. The implantation temperatures were RT, 500 °C and 1000 °C to study the influence of temperature on the defect structures. For all the ions the Rutherford backscattering-channeling (RBS-C) results indicate a surface region with low residual disorder in the Al-sublattice. Near the end of range the channeled spectrum almost reaches the random indicating a high damage level for fluences of 1 × 1017 cm−2. The transmission electron microscopy (TEM) photographs show a layered contrast feature for the C implanted sample where a buried amorphous region is present. For the N implanted sample the Electron Energy Loss Spectroscopy (EELS) elemental mapping give evidence for the presence of a buried damage layer decorated with bubbles. Samples implanted at high temperatures (500 °C and 1000 °C) show a strong contrast fluctuation indicating a defective crystalline structure of sapphire." @default.
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- W2012594501 date "2009-05-01" @default.
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- W2012594501 title "Temperature behavior of damage in sapphire implanted with light ions" @default.
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- W2012594501 doi "https://doi.org/10.1016/j.nimb.2009.01.089" @default.
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