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• W2012597731 abstract "We performed first-principles calculations to reveal a viable way for tailoring the electronic properties of Z-shaped double gate graphene field effect transistor (Z-GFET). We used B/N impurities in channel region of Z-GFET. It is revealed that doping of channel region by B/N has a significant effect on its band gap which is directly reflected in the corresponding current–voltage characteristics. A semiconducting to metallic transition is also observed in selected configurations. For B–N co-doping (config. W), direct band gap of 1.84 eV is obtained which is 20% lower than that of pristine channel. Present results are useful for future electronic devices." @default.
• W2012597731 created "2016-06-24" @default.
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• W2012597731 date "2015-03-01" @default.
• W2012597731 modified "2023-09-28" @default.
• W2012597731 title "Tailoring the electronic properties of a Z-shaped graphene field effect transistor via B/N doping" @default.
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• W2012597731 doi "https://doi.org/10.1016/j.physleta.2014.12.046" @default.
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