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• W2012597791 abstract "Electrical measurements have been performed on poly[2-methoxy, 5 ethyl (2′ hexyloxy) paraphenylenevinylene] in a pn junction with silicon. These included current–voltage measurements, capacitance–voltage measurements, capacitance–transient spectroscopy, and admittance spectroscopy. The measurements show evidence for large minority-carrier injection into the polymer possibly enabled by interface states for which evidence is also found. The shallow acceptor level depth (0.12 eV) and four deep trap level activation energies (0.30 and 1.0 eV majority-carrier type; 0.48 and 1.3 eV minority-carrier type) are found. Another trap that is visible at room temperature has point-defect nature." @default.
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• W2012597791 date "2001-02-01" @default.
• W2012597791 modified "2023-09-25" @default.
• W2012597791 title "Minority-carrier effects in poly-phenylenevinylene as studied by electrical characterization" @default.
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• W2012597791 doi "https://doi.org/10.1063/1.1334634" @default.
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