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• W2012603858 abstract "Avalanche photodetectors (APDs) have been fabricated in ON Semiconductor's C5 process without any special process or fabrication steps. The electrical and optical characteristics of APDs, with varying active area and guard ring configurations, are reported in this paper. Also reported are the details and considerations that went into laying out the APDs. It was found that substrate current was negligible and nearly independent of the geometrical shape of the substrate tie-downs around the perimeter of the APD structures. The measured APD breakdown is approximately 14 V. The devices show optical gains in excess of 1,000 at photocurrents of 10 µA." @default.
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• W2012603858 date "2012-08-01" @default.
• W2012603858 modified "2023-09-23" @default.
• W2012603858 title "Performance and characteristics of silicon avalanche photodetectors in the C5 process" @default.
• W2012603858 cites W1981920639 @default.
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• W2012603858 doi "https://doi.org/10.1109/mwscas.2012.6291975" @default.
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