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- W2012645820 abstract "Tunneling rate due to electron–phonon interaction is calculated for a double quantum well structure. A significant negative differential conductance is expected because of the resonant behavior of longitudinal optical phonons. The results show that a negative differential conductance of up to 0.3 Ω−1 can be achieved. Based on this result, a new class of the devices that use the phonon-assisted tunneling as an operating principle is proposed." @default.
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- W2012645820 date "1993-08-15" @default.
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- W2012645820 title "Feasibility of phonon-assisted electronic devices" @default.
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- W2012645820 doi "https://doi.org/10.1063/1.355294" @default.
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