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- W2012738220 abstract "One-sided selectively Si-doped n-AlxGa1−xAs/GaAs multiple quantum well heterostructures were grown by molecular beam epitaxy, which exhibit an enhanced mobility of more than 6×105 cm2/V s at 4 K using a binary AlAs spacer as narrow as 4.5 nm. In this heterostructure the two-dimensional electron gas is formed at the all-binary GaAs/AlAs interface of the constituent asymmetric GaAs quantum wells. The periodic sequence of electrically not coupled electron channels of high mobility with a spacing of about 133 nm is attractive for fundamental investigations; e.g., coupled-layer plasmon modes have been studied which give important information on the carrier density profile." @default.
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- W2012738220 date "1987-05-04" @default.
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- W2012738220 title "Improved electron mobility by AlAs spacer in one‐sided selectively doped Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>As/GaAs multiple quantum well heterostructures" @default.
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- W2012738220 doi "https://doi.org/10.1063/1.97920" @default.
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