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- W2012799757 abstract "Permanent Si ${E}^{ensuremath{'}}$ centers with concentrations as high as ${10}^{17}$ spins/g induced in high-purity Si${mathrm{O}}_{2}$ by sub-band-gap (6.4 eV) light were studied by electron-spin resonance. Although an electron-trap nitrogen center has been reported as the dominant defect induced by 7.9-eV photons in Suprasil 1 silica, its absence in the present experiment is evidence that free carriers are not produced by 6.4-eV photons. The ${E}^{ensuremath{'}}$-center concentration increased as the square of 6.4-eV laser power, confirming the efficacy of two-photon processes for producing point defects in silica with sub-band-gap light. Our evidence supports the view that ${E}^{ensuremath{'}}$ centers are generated by nonradiative decay of neutral excitons." @default.
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- W2012799757 date "1988-07-25" @default.
- W2012799757 modified "2023-09-26" @default.
- W2012799757 title "Mechanism of Intrinsic Si<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msup><mml:mrow><mml:mi>E</mml:mi></mml:mrow><mml:mrow><mml:mo>′</mml:mo></mml:mrow></mml:msup></mml:mrow></mml:math>-Center Photogeneration in High-Purity Silica" @default.
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- W2012799757 doi "https://doi.org/10.1103/physrevlett.61.444" @default.
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