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- W2012803762 abstract "Tuning the process pressure at the deposition of the passivation layers has been suggested in the way of controlling the threshold voltage of a-IGZO TFTs, making it possible to employ gate driver integration. It has showed that Vth linearly changes with the pressure ΔVth/ΔPressure∼3.5V/100Pa. A 3.2 inch WVGA AMLCD with integrated gate driver circuits were successfully demonstrated using the enhancement mode BCE type bottom gate a-IGZO TFTs." @default.
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- W2012803762 date "2011-06-01" @default.
- W2012803762 modified "2023-10-14" @default.
- W2012803762 title "9.3: Control of Threshold Voltage in Back Channel Etch Type Amorphous Indium Gallium Zinc Oxide Thin Film Transistors" @default.
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- W2012803762 doi "https://doi.org/10.1889/1.3621002" @default.
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