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• W2012858345 endingPage "L184" @default.
• W2012858345 startingPage "L184" @default.
• W2012858345 abstract "Continuous-wave operation at room-temperature has been demonstrated for InGaN multi-quantum-well (MQW) laser diodes (LDs) grown on low-dislocation-density n-GaN substrates with a backside n-contact. The current, current density and voltage at the lasing threshold were 144 mA, 10.9 kA/cm 2 and 10.5 V, respectively, for a 3 µm wide ridge-geometry diode with high-reflection dielectric coated mirrors. Single-transverse-mode emission was observed in the far-field pattern of the LDs and the beam full width at half power in the parallel and perpendicular directions was 6° and 25°, respectively." @default.
• W2012858345 created "2016-06-24" @default.
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• W2012858345 date "1999-02-01" @default.
• W2012858345 modified "2023-09-26" @default.
• W2012858345 title "Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact" @default.
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• W2012858345 doi "https://doi.org/10.1143/jjap.38.l184" @default.
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