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- W2012931986 abstract "We have studied the reconstructions of the 6HSiC (0001) and (0001̄) surfaces after annealing at 850–950°C under a Si flux using scanning tunneling microscopy (STM). On both the Si-terminated (0001) and C-terminated (0001̄) surfaces, we observed a (3 × 3) reconstruction after annealing at 850°C, which changed to a (√3 × √3) reconstruction after further annealing at 950°C. We propose a model for the (3 × 3) surface with a 49ML adatom-coverage. The (√3 × √3) surface has a 13ML adato observations are consistent with previous LEED results. We also observed a new (9 × 9) reconstruction on the (0001) surface after further annealing the (3 × 3) surface at 900°C under a Si flux. When the (0001) surface was flashed to 1150°C without a Si flux, a graphitized surface with a (6 × 6) reconstruction was formed. The empty-state and filled-state images showed a contrast reversal. When Si was deposited in the (6 × 6) surface, the polarity of the contrast reversal was reversed, confirming the validity of our previous electronic structure calculations for this surface." @default.
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- W2012931986 date "1996-05-01" @default.
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- W2012931986 title "Atomic structures of 6HSiC (0001) and (0001̄) surfaces" @default.
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- W2012931986 doi "https://doi.org/10.1016/0039-6028(95)01355-5" @default.
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