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- W2012932959 abstract "As the physical dimensions of integrated circuit devices decrease the resultant dielectric thickness also decreases. However with this reduction in thickness particularly in the sub-15 nm region there are a number of undesirable physical and electrical effects associated with conventional silicon dioxide films. This paper considers the growth kinetics and resultant characteristics of such thin oxides as well as possible replacements by way of oxynitrides or nitrides. A comparison is made of each type of dielectric and their applicability to future semiconductor processing." @default.
- W2012932959 created "2016-06-24" @default.
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- W2012932959 date "1991-04-01" @default.
- W2012932959 modified "2023-10-16" @default.
- W2012932959 title "Ultra-thin dielectrics for semiconductor applications— growth and characteristics" @default.
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- W2012932959 doi "https://doi.org/10.1016/0026-2692(91)90023-g" @default.
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