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- W2013018098 abstract "Polycrystalline diamond films were deposited on p-type (100) silicon substrates by the microwave plasma chemical vapor deposition system. The free-standing diamond film was then obtained by etching the silicon substrate with a KOH solution. It was found that more non-diamond components, i.e., SiC and amorphous carbon, existed on the bottom surface of the free-standing diamond film. Two different contact geometries, coplanar contact and sandwich contact geometries, were used to characterize the in-plane and transverse high-voltage electrical properties of the free-standing diamond film, respectively. The transverse electrical property of the free-standing diamond film showed the asymmetric current–voltage ( I – V ) characteristic and lower breakdown voltage at -220 V and 850 V. However, the in-plane electrical property exhibited the symmetric I – V characteristic in the range of -1100 V to 1100 V. The electrical properties were successfully represented by the Frenkel-Poole conduction mechanism at high voltages (>200 V). The simulated results indicated that the breakdown field was strongly related to the Coulombic center density of the free-standing diamond film." @default.
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- W2013018098 date "2001-05-01" @default.
- W2013018098 modified "2023-10-18" @default.
- W2013018098 title "Electrical Properties of the Free-Standing Diamond Film at High Voltages" @default.
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- W2013018098 doi "https://doi.org/10.1143/jjap.40.3240" @default.
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