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• W2013071609 abstract "We have optimized low-temperature-grown In0.3Ga0.7As for use in ultrafast photoconductive devices. Using low temperature ex situ annealing techniques, we have produced a photoconductive material that is highly resistive (∼104Ωcm), has sub-500fs carrier trapping lifetimes, and is matched to 1.06μm laser excitation." @default.
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• W2013071609 date "2004-11-22" @default.
• W2013071609 modified "2023-10-18" @default.
• W2013071609 title "Highly resistive annealed low-temperature-grown InGaAs with sub-500fs carrier lifetimes" @default.
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• W2013071609 doi "https://doi.org/10.1063/1.1824179" @default.
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