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- W2013094413 abstract "InGaN/GaN multiple quantum well samples were grown by metal organic chemical vapor deposition with thinner low-temperature GaN buffers than that in the conventional structure. It was found that the absorption recovery times of the InGaN/GaN quantum wells can be controlled by varying the thickness of the low-temperature GaN buffers. Transmission electron microscopy results showed that increased dislocations were introduced in the quantum well region with decreased low-temperature GaN buffer thickness. The degraded crystalline quality of the absorbing regions caused an increased density of nonradiative recombination centers, which were responsible for the fast recovery of the absorption." @default.
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- W2013094413 date "2007-11-29" @default.
- W2013094413 modified "2023-10-18" @default.
- W2013094413 title "Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers" @default.
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- W2013094413 doi "https://doi.org/10.1117/12.756401" @default.
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