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- W2013117022 abstract "A normally-off GaN-based metal–oxide–semiconductor field effect transistor (MOSFET) was fabricated using the Al 0.3 Ga 0.7 N/GaN heterostructure with a two-dimensional electron gas (2DEG) density of ∼1×10 14 cm -2 grown on a silicon substrate. The AlGaN layer in the gate region was fully recessed and the whole surface of the device was covered with a high-quality plasma-assisted atomic-layer-deposited (PAALD) Al 2 O 3 layer, which plays the role of not only a gate insulator in the recessed gate region, but also a surface passivation layer in the ungated region between the source and the drain. The fabricated Al 2 O 3 /GaN MOSFET exhibited excellent device properties, such as a threshold voltage of 1.1 V extrapolated in the linear region at a drain voltage of 0.1 V, maximum drain current of 353 mA/mm, field-effect mobility of 225 cm 2 ·V -1 ·s -1 , and on-resistance of 9.7 Ω·mm, which are among the best values ever reported for GaN MOSFETs fabricated on silicon substrates." @default.
- W2013117022 created "2016-06-24" @default.
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- W2013117022 date "2010-12-01" @default.
- W2013117022 modified "2023-10-18" @default.
- W2013117022 title "Performance Enhancement of Normally-Off Plasma-Assisted Atomic Layer Deposited Al<sub>2</sub>O<sub>3</sub>/GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Postdeposition Annealing" @default.
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- W2013117022 doi "https://doi.org/10.1143/jjap.49.126501" @default.
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