Matches in SemOpenAlex for { <https://semopenalex.org/work/W2013119199> ?p ?o ?g. }
- W2013119199 endingPage "381" @default.
- W2013119199 startingPage "275" @default.
- W2013119199 abstract "We present the effect of doping with In, V, and Cl on the values of resistivity (ρ) and mobility-lifetime (μτ) in (Cd,Mn)Te crystals grown by the Bridgman method and with diameters of 2 or 3 in. This material is investigated to use in room-temperature X-ray and gamma-ray detectors. We carried out post-growth annealing processes in cadmium vapors at 500 °C to obtain more homogeneous crystal properties. The EU-ρ-μτ-SCAN machine, which uses the principle of time-dependent charge measurement, allowed us to map the values of resistivity and mobility-lifetime in crystal plates. High values of those two quantities are crucial in nuclear detector applications. Crystals doped with In show inhomogeneous properties, which makes the fabrication of competitive large-area crystals more difficult. Low-temperature post-growth annealing in Cd vapors is insufficient for (Cd,Mn)Te:In crystals, where the decrease of ρ and μτ values is observed. Such annealing works for (Cd,Mn)Te:V crystals, where the mean values of ρ and μτ do not change significantly, but their distributions are more uniform. Both dopants, vanadium and indium, used together with an excess of Te, effectively increased ρ and μτ. Using the 57Co source, the spectroscopic performance of each pixel of the detector co-doped with In and V was shown." @default.
- W2013119199 created "2016-06-24" @default.
- W2013119199 creator A5058701000 @default.
- W2013119199 date "1994-01-01" @default.
- W2013119199 modified "2023-10-10" @default.
- W2013119199 title "Fundamental studies on Bridgman growth of CdTe" @default.
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