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- W2013181738 abstract "A generalised effective-mass model is developed that, in addition to describing the band structure from the Gamma point to approximately half-way to the Brillouin zone boundary, retains the essential orbital information of a tight-binding calculation. The model is used to compare the effects of 'band offset' and 'orbital mismatch' across a semiconductor heterojunction. When applied to the case of a GaAs quantum well in AlxGa1-xAs it is found that for broad wells the effects of mismatch of the bonding nature of the orbitals across an interface are comparable with those of band offset. In addition, it is found that in narrow wells, differences in the valence orbitals can have a dominant effect due to admixture of evanescent zone-boundary states." @default.
- W2013181738 created "2016-06-24" @default.
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- W2013181738 date "1986-07-20" @default.
- W2013181738 modified "2023-09-26" @default.
- W2013181738 title "Orbital mismatch in semiconductor quantum wells" @default.
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- W2013181738 doi "https://doi.org/10.1088/0022-3719/19/20/022" @default.
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