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- W2013214009 abstract "The advantages of alternative precursors to the conventional metal alkyls for the growth of III-V semiconductor layers by MOVPE are discussed. The alternatives presently available include the volatile Lewis acid/Lewis base adducts of the type R3M · NR3; covalently bound species R2MNR2; and a new class of non-volatile adducts formed between metal alkyls and “diphos”, (C6H5)2PCH2CH2P(C6H5)2. The use of the latter class of compound for both the in situ generation of metal alkyls in reactors, and as a stage in the preparation of high-purity metal alkyl is described and preliminary results presented on the purification achieved in epilayers grown using trimethyl indium derived from the diphos adduct. Vapour pressure versus temperature data for the generation of metal alkyl from some of the non-volatile adducts are given, and finally the use of the modified entrainment method (MEM) for the injection of alkyl vapour into a reactor is discussed." @default.
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- W2013214009 date "1986-05-01" @default.
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- W2013214009 title "Novel precursors for the growth of III–V semiconductors by MOVPE" @default.
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- W2013214009 doi "https://doi.org/10.1016/0022-0248(86)90230-7" @default.
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