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• W2013225602 endingPage "105023" @default.
• W2013225602 startingPage "105023" @default.
• W2013225602 abstract "The effect of thermal annealing on In0.25Ga0.75N/GaN quantum wells grown by molecular beam epitaxy at 550 °C is investigated. A strong increase in the 300 K photoluminescence (PL) intensity is observed for samples annealed at 880 °C, while degradation occurs for higher temperatures. The improvement of the optical properties is ascribed to higher internal quantum efficiency (IQE), as indicated by temperature-dependent and time-resolved PL experiments. The effect of carrier localization due to possible quantum dot formation via indium clustering is ruled out based on high-resolution transmission electron microscopy imaging. IQE improvement is thus attributed to a reduction of point defects upon annealing." @default.
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• W2013225602 date "2012-08-28" @default.
• W2013225602 modified "2023-10-16" @default.
• W2013225602 title "Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well" @default.
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• W2013225602 doi "https://doi.org/10.1088/0268-1242/27/10/105023" @default.
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