Matches in SemOpenAlex for { <https://semopenalex.org/work/W2013239631> ?p ?o ?g. }
- W2013239631 abstract "Differential scanning calorimetry (DSC) was used to study the dehydrogenation processes that take place in three hydrogenated amorphous silicon materials: nanoparticles, polymorphous silicon, and conventional device-quality amorphous silicon. Comparison of DSC thermograms with evolved gas analysis (EGA) has led to the identification of four dehydrogenation processes arising from polymeric chains $(A)$, SiH groups at the surfaces of internal voids $({A}^{ensuremath{'}})$, SiH groups at interfaces $(B)$, and in the bulk $(C)$. All of them are slightly exothermic with enthalpies below $50phantom{rule{0.3em}{0ex}}mathrm{meV}$∕(H atoms), indicating that, after dissociation of any SiH group, most dangling bonds recombine. The kinetics of the three low-temperature processes [with DSC peak temperatures at around 320 $(A)$, 360 $({A}^{ensuremath{'}})$, and $430phantom{rule{0.2em}{0ex}}ifmmode^circelsetextdegreefi{}mathrm{C}$ $(B)$] exhibit a kinetic-compensation effect characterized by a linear relationship between the activation entropy and enthalpy, which constitutes their signature. Their $mathrm{Si}mathrm{H}$ bond-dissociation energies have been determined to be $E{(mathrm{Si}mathrm{H})}_{0}=3.14$ $(A)$, 3.19 $({A}^{ensuremath{'}})$, and $3.28phantom{rule{0.3em}{0ex}}mathrm{eV}$ $(B)$. In these cases it was possible to extract the formation energy $E(mathrm{DB})$ of the dangling bonds that recombine after $mathrm{Si}mathrm{H}$ bond breaking [0.97 $(A)$, 1.05 $({A}^{ensuremath{'}})$, and 1.12 $(B)$]. It is concluded that $E(mathrm{DB})$ increases with the degree of confinement and that $E(mathrm{DB})>1.10phantom{rule{0.3em}{0ex}}mathrm{eV}$ for the isolated dangling bond in the bulk. After $mathrm{Si}mathrm{H}$ dissociation and for the low-temperature processes, hydrogen is transported in molecular form and a low relaxation of the silicon network is promoted. This is in contrast to the high-temperature process for which the diffusion of H in atomic form induces a substantial lattice relaxation that, for the conventional amorphous sample, releases energy of around $600phantom{rule{0.3em}{0ex}}mathrm{meV}$ per H atom. It is argued that the density of sites in the Si network for H trapping diminishes during atomic diffusion." @default.
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- W2013239631 date "2006-02-13" @default.
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- W2013239631 title "Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials" @default.
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- W2013239631 doi "https://doi.org/10.1103/physrevb.73.085203" @default.
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