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• W2013264989 abstract "In this paper, the recombination through defects in absorber and CdS/Cu(In,Ga)Se2 interface states has been investigated by comparing photoluminescence to electroluminescence. The ranges of photoluminescence and electroluminescence collection region are 450 and 90 nm, respectively. Thus, electroluminescence is more sensitive to CdS/CIGS interface recombination than photoluminescence. The devices experienced rapid thermal annealing at the temperature of 300 °C. After annealing, the reduction of InCu defects in absorber layer increased PL and EL intensities at +0.7 V bias by three times, while the decrease of interface states increased EL intensities from +1.0 to +1.5 V bias by six times. The capacitance–voltage characterization confirmed that the density of interface states fell from 2.8×1013 to 1.5×1013 cm−2." @default.
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• W2013264989 date "2015-04-01" @default.
• W2013264989 modified "2023-10-18" @default.
• W2013264989 title "Analysis of recombination path for Cu(In,Ga)Se2 solar cells through luminescence" @default.
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• W2013264989 doi "https://doi.org/10.1016/j.matlet.2015.01.105" @default.
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