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• W2013274712 abstract "Ternary compound films of ZnO–In2O3 were deposited using an opposed DC planar magnetron sputtering system. The phase change and electrical properties of the Zn–In oxide films were investigated over a wide range of ratio of Zn to In. Impurities of Al and Sn were intentionally added to the films in order to investigate the influence of these impurities on the above properties. A low-resistivity amorphous film was formed by adding Al at substrate temperatures of below 250°C. At 150°C, amorphous phase film was obtained at a wide range of ratio of Zn to In and the minimum resistivity was 4×10−4 Ω cm. It was found that the addition of Al or Sn impurities enlarged the level of Zn content wherever the amorphous structure appears. Doping effect of Al and Sn for homologous phase was not observed. However, in amorphous phase ZnO–In2O3, the addition of Al and Sn did not increase resisitivity when the ratio of Zn to In was at the level corresponding to ZnIn2O4, Zn2In2O5 and Zn3In2O6 in a crystalline homologous phase." @default.
• W2013274712 created "2016-06-24" @default.
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• W2013274712 date "2002-08-01" @default.
• W2013274712 modified "2023-10-14" @default.
• W2013274712 title "Amorphous ZnO–In2O3 transparent conductive films by simultaneous sputtering method of ZnO and In2O3 targets" @default.
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• W2013274712 doi "https://doi.org/10.1016/s0042-207x(02)00123-9" @default.
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