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• W2013285870 abstract "The effect of thermal and radiation defects on the minority-charge-carrier recombination in the base region of a diffused silicon p-n structures with doping levels of 1014–1018 cm−3 was studied. The parameters of thermal defects responsible for the change of the carrier lifetime in Si following its thermal treatment during the production of p-n structures are determined. The effective minority-charge-carrier trapping is observed in heavily-doped structures at T ⩽ 100 K. The dependence of the coefficient of the radiation-induced change in the carrier lifetime on the base-region doping level was found. Using this data and the results obtained by the capacitance spectroscopy technique the analysis of recombination properties of defects has been done. At carrier concentrations n0, p0 ⪢ 1016 cm−3 the coefficient of the radiation-induced change in the carrier lifetime (Kτ) is shown to be determined by the introduction of the E-center in n-Si and the defect level Ec − 0.27 eV in p-Si. At a low excitation level in heavily-doped p-n structures a significant decrease in Kτ is observed at T = 78 K as compared to the value at 300 K." @default.
• W2013285870 created "2016-06-24" @default.
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• W2013285870 date "1986-10-01" @default.
• W2013285870 modified "2023-10-14" @default.
• W2013285870 title "The effect of thermal and radiation defects on the recombination properties of the base region of diffused silicon p-n structures" @default.
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• W2013285870 doi "https://doi.org/10.1016/0038-1101(86)90104-8" @default.
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