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• W2013291837 abstract "Unprecedented Hall mobility, electron concentration and photoconductivity are demonstrated in semiconducting - thin films prepared on Si(111) surfaces by co-sputtering of iron and silicon followed by post-anneal. Characterization of the silicide as a function of the initial temperature and post-treatment shows that annealing temperatures above C are needed to obtain single phase -. Reactive deposition on substrates heated at C leads to textured films. Majority carriers are electrons in all these unintentionally doped films. Hall concentrations between and electrons and respective Hall mobilities from 290 to are measured at room temperature, involving two different conduction band minima in these two extreme cases. Only deep centres exist in the samples having the lower carrier concentration. In such a situation, raw data must be corrected for the substrate contribution to extract values which are relevant for the - film alone. Photoconductivity also takes place in these samples: at 80 K, it shows a maximum value at the direct band gap of - while at 296 K a step still appears at the same energy. Such results are a consequence of the important decrease of the residual impurity concentration in comparison to values previously published." @default.
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• W2013291837 date "1998-10-01" @default.
• W2013291837 modified "2023-09-25" @default.
• W2013291837 title "Semiconducting iron silicide thin films on silicon (111) with large Hall mobility and low residual electron concentration" @default.
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• W2013291837 doi "https://doi.org/10.1088/0268-1242/13/10/020" @default.
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